APTDF200H100G APTDF200H100G C rev 3 october, 2012 www.microsemi.com 1-5 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 1000 v t c = 25c 255 i f(av) maximum average forward current duty cycle = 50% t c =70c 200 i f(rms) rms forward current duty cycle = 50% t c = 45c 255 i fsm non-repetitive forward surge current 8.3ms t c = 45c 1500 a these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com ac1 + ac2 - v rrm = 1000v i c = 200a @ tc = 70c application ? uninterruptible power supply (ups) ? induction heating ? welding equipment ? high speed rectifiers features ? ultra fast recovery times ? soft recovery characteristics ? high blocking voltage ? high current ? low leakage current ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? low losses ? low noise switching ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant diode full bridge power module downloaded from: http:///
APTDF200H100G APTDF200H100G C rev 3 october, 2012 www.microsemi.com 2-5 electrical characteristics symbol characteristic test conditions min typ max unit i f = 200a 2.1 2.7 i f = 300a 2.3 v f diode forward voltage i f = 200a t j = 125c 1.7 v t j = 25c 100 i rm maximum reverse leakage current v r = 1000v t j = 125c 600 a c t junction capacitance v r = 1000v 240 pf dynamic characteristics symbol characteristic test conditions min typ max unit t rr reverse recovery time i f =1a,v r =30v di/dt = 200a/s t j = 25c 43 ns t j = 25c 290 t rr reverse recovery time t j = 125c 340 ns t j = 25c 1.37 q rr reverse recovery charge t j = 125c 8.1 c t j = 25c 12 i rrm reverse recovery current i f = 200a v r = 667v di/dt = 400a/s t j = 125c 36 a t rr reverse recovery time 160 ns q rr reverse recovery charge 14.2 c i rrm reverse recovery current i f = 200a v r = 667v di/dt = 2000a/s t j = 125c 140 a thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.285 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 300 g downloaded from: http:///
APTDF200H100G APTDF200H100G C rev 3 october, 2012 www.microsemi.com 3-5 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =-55c t j =25c t j =175c t j =125c 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage trr vs. current rate of charge 100 a 200 a 300 a 0 50 100 150 200 250 300 350 400 0 400 800 1200 1600 2000 2400 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =667v qrr vs. current rate charge 100 a 200 a 300 a 4 6 8 10 12 14 16 18 0 400 800 1200 1600 2000 2400 -di f /dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =667v irrm vs. current rate of charge 100 a 200 a 300 a 20 40 60 80 100 120 140 160 0 400 800 1200 1600 2000 2400 -di f /dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =667v capacitance vs. reverse voltage 0 200 400 600 800 1000 1200 1400 1600 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 case temperature (oc) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =175c downloaded from: http:///
APTDF200H100G APTDF200H100G C rev 3 october, 2012 www.microsemi.com 4-5 sp6 package outline (dimensions in mm) downloaded from: http:///
APTDF200H100G APTDF200H100G C rev 3 october, 2012 www.microsemi.com 5-5 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
